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| United States Patent | 8,233,317 |
| Breitwisch , et al. | July 31, 2012 |
A phase change memory cell that includes a bottom electrode, a top electrode separated from the bottom electrode, and growth-dominated phase change material deposited between the bottom electrode and the top electrode and contacting the bottom electrode and the top electrode and surrounded by insulation material at sidewalls thereof. The phase change memory cell in a reset state only includes an amorphous phase of the growth-dominated phase change material within an active volume of the phase change memory cell.
| Inventors: | Breitwisch; Matthew J. (Yorktown Heights, NY), Lam; Chung H. (Yorktown Heights, NY), Rajendran; Bipin (Yorktown Heights, NY), Raoux; Simone (San Jose, CA), Schrott; Alejandro G. (Yorktown Heights, NY), Krebs; Daniel (Aachen, DE) |
|---|---|
| Assignee: |
International Business Machines Corporation
(Armonk,
NY)
|
| Family ID: | 43991994 |
| Appl. No.: | 12/619,362 |
| Filed: | November 16, 2009 |
| Document Identifier | Publication Date | |
|---|---|---|
| US 20110116307 A1 | May 19, 2011 | |
| Current U.S. Class: | 365/163; 257/2; 257/4; 365/148 |
| Current CPC Class: | G11C 13/0004 (20130101); G11C 13/0069 (20130101); H01L 45/06 (20130101); H01L 45/1226 (20130101); H01L 45/1233 (20130101); H01L 45/144 (20130101); H01L 45/1675 (20130101); G11C 7/04 (20130101) |
| Current International Class: | G11C 11/00 (20060101); H01L 47/00 (20060101) |
| Field of Search: | ;365/163 |
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